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QPD1003 – Transistor

SKU: P137 Category:

Summary: QPD1003 – Transistor

The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request.


Key Features

• Frequency: 1.2 to 1.4 GHz

• Output Power (P3dB) 1 : 540 W

• Linear Gain1 : 19.9 dB

• Typical PAE3dB1 : 66.7%

• Operating Voltage: 50 V

• Low thermal resistance package

• Pulse capable Note 1: @ 1.3 GHz


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