P139
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QPD1008L – Transistor


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SKU: P139 Category:

Summary: QPD1008L

The QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail.   The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation.  The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Product Features

• Frequency: DC to 3.2 GHz

• Output Power (P3dB) 1 : 162 W

• Linear Gain1 : 17.5 dB

• Typical PAE3dB1 : 72%

• Operating Voltage: 50 V

• Low thermal resistance package

• CW and Pulse capable

• Note 1: @ 2 GHz

 

Applications

•Military radar

• Civilian radar

• Land mobile and military radio communications

• Test instrumenation

• Wideband or narrowband amplifiers

• Jammers

• Avionics

 

Click for datasheet