RFMW Broadband GaN Transistors provide 65W

RFMW Broadband GaN Transistors provide 65W

GaN Transistors RFMW, Ltd. announces design and sales support for two unmatched discrete GaN on SiC HEMTs.

Operating from DC to 3.7 GHz with a 50V supply rail, Qorvo provides the QPD1015L in an eared package and the QPD1015 in an earless package. Both transistors offer 20dB of gain and a Psat of 48.5dBm. PAE is 74%. Target markets include commercial and military radar, communications, avionics, jammers and test instrumentation.

 

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