Qorvo Launches Compact GaN Power Amplifiers

Qorvo Launches Compact GaN Power Amplifiers

Qorvo Launches Compact GaN Power Amplifiers for Advanced Radar Systems

Qorvo have introduced two new power amplifiers (PAs) including the industry’s first 500-watt, L-Band PA internally matched to 50 ohms. These high-power devices are optimized for use in defense and civilian radar systems, with features designed to shorten and simplify system implementation.

Built on Qorvo’s high-performance gallium nitride (GaN) technology, the new QPD1003 meets the performance needs of high-power phased arrays such as Active Electronic Scanned Array (AESA) radars, which operate in the 1.2 to 1.4 GHz frequency range. These systems require PAs that operate at maximum efficiency resulting in low heat generation in demanding environmental conditions. The new QPD1003 addresses these requirements through the innovative use of highly efficient GaN on silicon carbide (SiC) technology.

In addition to the QPD1003 L-Band PA, Qorvo also introduced a 450-watt S-Band PA, designed for 3.1 to 3.5 GHz S-Band radar systems. Both devices offer advantages in size and ease of implementation over conventional GaN transistors. They enable multiple frequency bands to be covered by a single matched design, which reduces circuit footprint and overall complexity when used in multi-kilowatt arrays. Additionally, reducing the amount of power dissipation results in further system operational savings by reducing the need to cool the system.

The new PAs support pulsed and linear operations, and are supplied in an air cavity package suited for defense and civilian radar applications. The table below outlines specifications for each.

QPD1003 – Transistor

QPD1017 – Compact GaN Power Amplifiers


Product Freq (GHz) Vd(V) Psat (W) PAE (%) LS Gain (dB)
QPD1003 datasheet 1.2-1.4 50 500 62 17
QPD1017 datasheet 3.1-3.5 50 450 57 13