tgf2935
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Qorvo

TGF2935 – Transistor

SKU: P172 Category:

The Qorvo TGF2935 is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo’s proven QGaN15 process. The device can support pulsed, CW, and linear operations.

Key Features

  • Frequency range: DC – 25 GHz
  • Output power (P3dB): 4.8 W at 10 GHz
  • Linear gain: 16 dB typical at 10 GHz
  • Typical PAE3dB: 60% at 10 GHz
  • Typical NF at 10 GHz: 1.3 dB
  • Operating voltage: 28V
  • CW and pulse capable
  • 0.60 x 0.55 x 0.10 die

 

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